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• W2243984347 abstract "Bilayer thick films of sacrificial titanium dioxide and Nb-doped lead zirconate titanate (PZTN) have been deposited on bare silicon wafers using electrophoretic deposition (EPD) technique. Deposition of such ceramic particles, dispersed ethanol-based suspensions, on semiconductor substrate has been made possible after preparation of alloyed junctions Al/Si characterized by ohmic behaviour. Sintering of green TiO 2 /PZTN films was performed at 900 °C for 1 h. The composition of the films, the thickness and relative density of the deposited materials have been analysed by EDS-SEM analysis. The lead diffusion through the silicon wafer has been reduced." @default.
• W2243984347 created "2016-06-24" @default.
• W2243984347 creator A5045905921 @default.
• W2243984347 creator A5061491858 @default.
• W2243984347 date "2015-07-01" @default.
• W2243984347 modified "2023-09-27" @default.
• W2243984347 title "Electrophoretic Deposition of Bilayer Based on Sacrificial Titanium Dioxide and Lead Zirconate Titanate on Bare Silicon Wafer" @default.
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• W2243984347 doi "https://doi.org/10.4028/www.scientific.net/kem.654.132" @default.
• W2243984347 hasPublicationYear "2015" @default.
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