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- W2244865493 abstract "We report the measurement of impact ionization rates for electrons and holes in the direct band-gap semiconductor alloy In$sub 0$.$sub 14$Ga$sub 0$.$sub 86$As. Our results show clearly that the ionization rate for holes is greater than that for electrons. The measurments were made for electric fields between 2.6times10$sup 5$ and 3.4times10$sup 5$ V cm$sup -1$. In this range, the ionization coefficients can be expressed as $alpha$=$alpha$/sub infinity/ exp(-A/ E) for electrons and $beta$=$beta$/sub infinity/ exp(-B/E) for holes with $alpha$/ sub infinity/=1.0times10$sup 9$ cm$sup -1$, A=3.6times10$sup 6$ V cm$sup -1$, and $beta$/sub infinity/=1.3times10$sup 8$ cm$sup -1$, B=2.7times10$sup 6$ V cm$sup - 1$." @default.
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- W2244865493 date "1975-09-15" @default.
- W2244865493 modified "2023-09-23" @default.
- W2244865493 title "Impact ionization coefficients for electrons and holes in In$sub 0$.$sub 14$Ga$sub 0$.$sub 86$As" @default.
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