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• W2246485779 startingPage "147" @default.
• W2246485779 abstract "This paper reports experimental results on the production and annealing of oxygen-vacancy related (VO n , 1<n<5) and carbon-related (C i O i , C i O i I, and C i C s ) defects in Ge-doped Czochralski-grown silicon (Cz-Si) materials containing carbon. The samples were irradiated by 2 MeV fast electrons and the behavior of radiation-produced defects is studied by means of infrared (IR) spectroscopy, monitoring the relevant bands in spectra. Regarding the VO n family, it was found that the presence of Ge affects the annealing temperature of VO defects as well as their fraction that is converted to VO 2 defects. Both effects are discussed in relation with an impact of Ge on the concentration of self-interstitials that take part in the annealing of VO defects via two reaction paths VO + I → O i and VO + O i → VO 2 . Furthermore, two bands at 1037 and 1051 cm -1 are attributed to the VO 5 defect, although three other bands at 762, 967 and 1005 cm -1 are believed to be associated with V n O m clusters containing carbon, most likely having a VO n C s structure. Regarding carbon-related complexes, it has been established that the annealing of the 862 cm -1 band belonging to the C i O i defect is accompanied by the emergence of the 1048 cm -1 band previously assigned to the C s O 2i center. The evolution of the C i C s and the C i O i I bands is monitored and the identification of bands at 947, 967 and 1020 cm -1 making their appearance in IR spectra over the temperature range where C i C s and C i O i I defects are annealed out is discussed." @default.
• W2246485779 created "2016-06-24" @default.
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• W2246485779 date "2011-08-01" @default.
• W2246485779 modified "2023-09-26" @default.
• W2246485779 title "IR Studies on VO_N, C_IO_I and C_IC_S Defects in Ge-Doped Cz-Si" @default.
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• W2246485779 doi "https://doi.org/10.4028/www.scientific.net/ssp.178-179.147" @default.
• W2246485779 hasPublicationYear "2011" @default.
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