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• W2246486278 abstract "Effective interface engineering technology in GaN-based insulated-gate heteroj unction transistors are of critical significance to enhance device stability and suppress current collapse. In this paper, we present an interface engineering approach featuring in situ low-damage remote plasma treatment prior to the dielectric deposition, to realize high-performance and high-stability GaN-based metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). This technology can remove the native oxide while forming a monocrystal-like nitridation interfacial-layer (NIL) on the GaN surface. The Al2O3(NIL)/GaN/AlGaN/GaN MIS heterostructures with high-quality interface exhibit well-behaved electrical characteristics, including suppressed gate leakage current, a steep subthreshold swing of ∼64 mV/dec, a small hysteresis of ∼0.09 V, tiny frequency/temperature-dispersions in the capacitance-voltage characteristics, and low interface trap density of ∼6×1011 − 6×1012 cm−2eV−1." @default.
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• W2246486278 date "2015-08-01" @default.
• W2246486278 modified "2023-10-01" @default.
• W2246486278 title "Nitridation interfacial-layer technology for enhanced stability in GaN-based power devices" @default.
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• W2246486278 doi "https://doi.org/10.1109/rfit.2015.7377940" @default.
• W2246486278 hasPublicationYear "2015" @default.
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