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- W2246700013 abstract "In present work the influence of growth conditions on structural quality of AlN layers grown by МОСVD have been investigated. The influence of buffer layers grown with different temperatures and V/III ratio on crystalline quality of AlN were explored. We have reported that the high temperature buffer layer with low V/III ratio is most efficient way to improve the structural quality of AlN. Further improvement was achieved by minimizing the parasitic reactions between NH3 and TMAl. It was carried out by optimization the total flow through the reactor. Applying these methods, it was possible to obtain a high-quality AlN layers (FWHM for (0002), (0004) and (101–3) reflections were 50, 97 and 202 arc seconds respectively) with good root-mean-square roughness of surface 0.7 nm." @default.
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- W2246700013 date "2015-03-15" @default.
- W2246700013 modified "2023-09-25" @default.
- W2246700013 title "INFLUENCE OF CONDITIONS OF GROWTH ON STRUCTURAL PERFECTION OF LAYERS OF ALN RECEIVED BY METHOD MOS-GIDRIDNOY OF AN EPITAXY" @default.
- W2246700013 doi "https://doi.org/10.17073/1609-3577-2013-1-45-48" @default.
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