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- W2247143987 abstract "Abstract : Due to the indirect energy band of group IV materials of Si and Ge, these materials and their alloys can't be used to make optical devices. In this project, direct bandgap group IV alloy of GeSn alloy was developed. This report covers: (a) growth techniques of GeSn alloy with various Sn compositions, (b) characterization of the alloy, and (c) physical properties of the alloy and identification of direct optical transitions." @default.
- W2247143987 created "2016-06-24" @default.
- W2247143987 creator A5047111519 @default.
- W2247143987 date "2012-03-01" @default.
- W2247143987 modified "2023-09-28" @default.
- W2247143987 title "Development of Direct Band Gap Group IV Semiconductors with the Incorporation of Sn" @default.
- W2247143987 doi "https://doi.org/10.21236/ada558773" @default.
- W2247143987 hasPublicationYear "2012" @default.
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