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- W2247159651 abstract "Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed." @default.
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- W2247159651 date "2015-07-01" @default.
- W2247159651 modified "2023-09-26" @default.
- W2247159651 title "Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction" @default.
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- W2247159651 doi "https://doi.org/10.1109/nano.2015.7388678" @default.
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