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- W2247230033 endingPage "08KC08" @default.
- W2247230033 startingPage "08KC08" @default.
- W2247230033 abstract "We inserted Cu(In,Ga)3Se5 into the CdS/Cu(In,Ga)Se2 interface of Cu(In,Ga)Se2 solar cells with a flat band profile and energy bandgaps (Eg) of 1.2 and 1.4 eV in order to investigate the repelling of holes by the effect of valence band offset (ΔEv). We found that open circuit voltage (VOC) was clearly improved from 0.66 to 0.75 V with Eg of 1.4 eV, although VOC was only increased from 0.63 to 0.64 V with Eg of 1.2 eV. For high efficiency, we fabricated Cu(In,Ga)Se2 solar cells with a single-graded band profile and an average Eg of 1.4 eV. Eventually, a conversion efficiency of 14.4% was obtained when Cu(In,Ga)3Se5 with a thickness of 30 nm was inserted, although the conversion efficiency was 10.5% without Cu(In,Ga)3Se5. These results suggest the importance of ΔEv in the suppression of interfacial recombination by repelling holes and possibility that the highest efficiency of Cu(In,Ga)Se2 solar cells with an average Eg of 1.4 eV could be achieved." @default.
- W2247230033 created "2016-06-24" @default.
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- W2247230033 date "2015-07-09" @default.
- W2247230033 modified "2023-10-05" @default.
- W2247230033 title "Control of valence band offset at CdS/Cu(In,Ga)Se<sub>2</sub>interface by inserting wide-bandgap materials for suppression of interfacial recombination in Cu(In,Ga)Se<sub>2</sub>solar cells" @default.
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- W2247230033 doi "https://doi.org/10.7567/jjap.54.08kc08" @default.
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