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• W2247286789 abstract "The objective of the thesis is toinvestigate applicability of high pulse repetition rate picosecondlasers for microfabrication and to clarify high repetition ratepulse interaction with metals and silicon. The ablation thresholdand accumulation rate dependence on the laser pulse duration forsilicon and metals has been experimentally studied. The model ofoptimal focus conditions for the maximum ablation rate wasdeveloped and experimentally confirmed. The material evaporationrate decreases duo to plasma screening for high pulse energies.Various pulse length lasers have been used for cutting and drillingof silicon. In this work key properties of laser radiation,radiation absorption, ablation and plasma formation are discussed.Surface spectroscopy methods have shown that laser cutting ofsilicon in the air leads to the cut surface doping with carbonatoms up to 5 µm depth from carbon dioxide in the atmosphere, andthe resulting silicon carbide influences the laser cut quality.Testing of applicability of high pulse repetition rate picosecondlasers for the production of complex shapes, relationships betweensurface roughness and process parameters were determined. Heatabstraction from the workpiece, during laser cutting of stents fromnitinol, limits the potential use of the average laser power andthe effective cutting speed The silver and gold picosecond laserablation in the liquid medium generates a narrow size distributionof nanoparticles, which form a stable... [to fulltext]%%%%Disertacijos tikslas yra istirti didelioimpulsų pasikartojimo dažnio pikosekundinių lazerių pritaikomumąmedžiagų mikroapdirbimui, bei isaiskinti tokių lazeriųspinduliuotės sąveikos su metalais ir siliciu ypatybes.Eksperimentiskai buvo istirta abliacijos slenkscio ir akumuliacijoskoeficiento priklausomybė nuo lazerio impulso trukmės siliciui irmetalams. Sukurtas ir eksperimentiskai patvirtintas modelisoptimalioms fokusavimo sąlygoms surasti, siekiant maksimaliosabliacijos spartos. Didelei impulso energijai, medžiagos nugarinimoefektyvumas mažėja dėl ekranuojancio plazmos poveikio. Įvairiųimpulso trukmių lazeriai buvo panaudoti silicio grežimui beipjovimui. Pavirsiaus spektroskopijos metodais, nustatyta, kadpjovimo metu silicis yra legiruojamas anglimi iki 5 µm gylio isatmosferoje esancio anglies dvideginio, o susidariusi siliciokarbido fazė įtakoja lazerinio pjovimo kokybe silicio bandiniogylyje. Taikant didelio impulsų pasikartojimo dažniopikosekundinius lazerius sudėtingos formos detalių gamybai, rastisąrysiai tarp pavirsiaus siurkstumo bei proceso parametrų. Pjaunantlazeriu stentus is Nitinolio, silumos nukreipimas nuo ruosinioriboja galimą panaudoti lazerio vidutine galią ir tuo paciupasiekiamą efektyvųjį pjovimo greitį; Vykdant sidabro ir auksoabliaciją pikosekundiniu lazeriu skystyje, generuojamos siaurodydžių skirstinio nanodalelės, kurios sudaro stabilius koloidiniustirpalus." @default.
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• W2247286789 date "2011-01-01" @default.
• W2247286789 modified "2023-09-27" @default.
• W2247286789 title "MICROPROCESSING OF SILICON AND METALS WITH HIGH-PULSE-REPETITION-RATE PICOSECOND LASERS" @default.
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