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- W2247371430 abstract "This study adopts pulsed deposition and CuSO4-based electrolytes to electroplate nanotwinned Cu (nt-Cu) film. We vary the parameters of electrodeposition, and investigate the properties of the nt-Cu films, including preferred orientation, twin structures, electrical conductivity, and hardness. In addition, the nt-Cu films are annealed to examine the effect of annealing conditions on the microstructure of the nt-Cu films. This study use X-ray diffraction, focused ion beam, back-scattered scanning electron microscopy, four-point probe, nano-indentation, and transmission electron microscope to characterize the nt-Cu films. We found that the nt-Cu films possess highest (111) preferred orientation of 50 mA/cm2. The (111) grains are columnar with highly-ordered nanotwins parallel to the substrate. The spacing of the nanotwins range from 10 nm to 70 nm. The refection (111) intensity decreases with a higher or a lower deposition current density. In addition, the average spacing of nanotwins increases if the current density deviate from 50 mA/cm2. It is interesting that extremely anisotropic grain growth occurs in (111)-oriented nt-Cu films during annealing. The lateral growth rate is much faster than the growth rate in the thickness direction. Therefore, huge (100) Cu grains can be obtained. For example, for a 7 um thick (111) nt-Cu films with an average grains size of 1.5 um, we can grow large {200} Cu grain with an average grain size of 438 um. In addition, the distribution of the {200} grain appears normal distribution. Thus it is different from traditional abnormal grain growth. We can fabricate arrays of -oriented single crystals on si substrates using the extremely anisotropic grain growth. These large {100} Cu single crystals may have potential application in 3D IC packaging." @default.
- W2247371430 created "2016-06-24" @default.
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- W2247371430 date "2015-01-01" @default.
- W2247371430 modified "2023-09-27" @default.
- W2247371430 title "以脈衝電鍍製備具有 (111) 優選方向之奈米雙晶銅膜以及熱處理之後 (100) Cu異方性單晶成長" @default.
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