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• W2247467031 endingPage "944" @default.
• W2247467031 startingPage "933" @default.
• W2247467031 abstract "Abstract After intentional degradation of amorphous silicon-silicon nitride field-effect transistors by applying a positive gate bias stress and light illumination, their characteristics were studied during isochronal annealing. The dependence on the annealing temperature of the source-drain current as well as the threshold voltage provided evidence for multiple stages of annealing. A peak at around 160°C can be associated with annealing of bulk metastable defect states in the a-Si: H and one at about 110°C with annealing of interface defects. Annealing below about 80°C probably originates from charge trapping in the silicon nitride layer. From the hydrogen-diffusion model of the kinetics, a method of distinguishing the annealing of different kinds of defect states is proposed." @default.
• W2247467031 created "2016-06-24" @default.
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• W2247467031 date "1992-05-01" @default.
• W2247467031 modified "2023-09-24" @default.
• W2247467031 title "Annealing kinetics in amorphous silicon field-effect transistors" @default.
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• W2247467031 doi "https://doi.org/10.1080/13642819208217911" @default.
• W2247467031 hasPublicationYear "1992" @default.
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