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• W2247483928 abstract "Electromigration tests of SnAg solder bump samples with 15 μm bump height and Cu under-bump-metallization (UBM) were performed. The test conditions were 1.45 × 104 A/cm2 at 185 °C and 1.20 × 104 A/cm2 at 0 °C. A porous Cu3Sn intermetallic compound (IMC) structure was observed to form within the bumps after several hundred hours of current stressing. In direct comparison, annealing alone at 185 °C will take more than 1000 h for porous Cu3Sn to form, and it will not form at 170 °C even after 2000 h. Here we propose a mechanism to explain the formation of this porous structure assisted by electromigration. The results show that the SnAg bump with low bump height will become porous-type Cu3Sn when stressing with high current density and high temperature. Polarity effects on porous Cu3Sn formation is discussed." @default.
• W2247483928 created "2016-06-24" @default.
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• W2247483928 date "2016-01-16" @default.
• W2247483928 modified "2023-10-17" @default.
• W2247483928 title "Formation Mechanism of Porous Cu3Sn Intermetallic Compounds by High Current Stressing at High Temperatures in Low-Bump-Height Solder Joints" @default.
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• W2247483928 doi "https://doi.org/10.3390/cryst6010012" @default.
• W2247483928 hasPublicationYear "2016" @default.
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