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- W2247493922 abstract "Deep Level Transient Spectroscopy (DLTS) has been applied to Metal-Insulator-Semiconductor (MIS) capacitors, consisting of a p + or n + a-Si:H gate on an intrinsic i-a-Si:H passivation layer deposited on crystalline silicon n-or p-type substrates. It is shown that the type of gate has a pronounced impact on the obtained spectra, whereby both the kind of defects (dangling bonds at the a-Si:H/(100) c-Si interface (P b0 defects) or in the amorphous silicon layer (D defects) and their relative importance (peak amplitude) may be varied. The highest trap densities have been found for the p + a-Si:H gate capacitors on an n-type Si substrate. In addition, the spectra may exhibit unexpected negative peaks, suggesting minority carrier capture. These features are tentatively associated with interface states at the p + or n + a-Si:H/i-a-Si:H interface. Their absence in Al-gate capacitors is in support of this hypothesis." @default.
- W2247493922 created "2016-06-24" @default.
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- W2247493922 date "2015-10-01" @default.
- W2247493922 modified "2023-09-25" @default.
- W2247493922 title "Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors" @default.
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- W2247493922 doi "https://doi.org/10.4028/www.scientific.net/ssp.242.61" @default.
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