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- W2247588370 abstract "The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels." @default.
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- W2247588370 date "2015-10-01" @default.
- W2247588370 modified "2023-09-27" @default.
- W2247588370 title "Hydrogen-Vacancy Complexes and their Deep States in <i>n</i>-Type Silicon" @default.
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- W2247588370 doi "https://doi.org/10.4028/www.scientific.net/ssp.242.163" @default.
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