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- W2247686088 abstract "Comprehensive understanding of the electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) is critical for the successful achievement of high efficiency and reliable devices for next-generation solidstate lighting applications. Incorporation of indium into GaN generally used to control the bandgap was found to induce advantages and disadvantages in terms of the electrical characteristics, optical output, and spectral properties of LEDs. For example, the growth of InGaN alloy for quantum-well structures was found to further enhance radiative recombination through indium localized states, originating from fluctuations in the indium composition. However, the incorporated indium induced compressive strain in the InGaN wells, forming an internal piezoelectric field. This field eventually resulted in a spatial separation of electron and hole wave functions and hence reduced radiative recombination and modified spectral properties. Indium-induced strains were also found to relax through the generation of dislocations, which may cause the evolution of leakage current as well as the modification of spectral properties. All of these phenomena originate from mismatches in lattice constants and thermal expansion coefficients between InN and GaN, causing thermodynamic instability at higher indium contents. In this study, we investigated the electrical and optical characteristics of LEDs fabricated with emission wavelengths of 429−467 nm. Figure 1 shows the optical output power of the LEDs (at 80 mA) as a function of the emission wavelength (indium content). Note that the optical output increases rapidly at wavelengths below 440 nm but remains almost constant at wavelengths above 440 nm. Such a positive correlation of optical output with respect to the emission wavelength is due to the indium composition fluctuation. For example, it may induce deep localized states consisting of randomly distributed indium-rich clusters, improving interband radiative recombination as a result of the enhanced quantum confinement effect (QCE). The indium composition fluctuation occurs due to lattice mismatch (3%) between InN and GaN, resulting in thermodynamic instability with increasing indium content." @default.
- W2247686088 created "2016-06-24" @default.
- W2247686088 date "2011-01-01" @default.
- W2247686088 modified "2023-09-25" @default.
- W2247686088 title "Characteriztions of GaN-Based Light-Emitting Diodes Fabricated with Emission Wavelengths of 429-467 nm" @default.
- W2247686088 doi "https://doi.org/10.1149/ma2011-02/47/2679" @default.
- W2247686088 hasPublicationYear "2011" @default.
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