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- W2247757459 abstract "The bipolar junction transistor (BJT) has, more than any other semiconductor device, made the largest single contribution to the present day technology of integrated circuits. This, the first active semiconductor device to be fabricated, still holds a dominant position in high speed chip design and application. Silicon bipolar technology now has many versatile competitors such as n-MOS and CMOS but the BJT is not likely to become redundant for some considerable time since it has the twin advantages of higher speed and greater current carrying capability per unit area. In this chapter consideration will be given to a new device, the heterojunction bipolar transistor (HBT) which introduces additional flexibility in the design of BJTs. Of particular importance is the prospect of higher frequency operation than is currently obtainable from conventional silicon devices. This arises from the design concepts brought about by the utilisation of bandgap engineering. In order to understand the importance of the HBT it is first necessary to identify the limitations of conventional BJT devices which result in their restricted high frequency performance." @default.
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- W2247757459 date "2011-10-06" @default.
- W2247757459 modified "2023-09-26" @default.
- W2247757459 title "Heterojunction bipolar transistors" @default.
- W2247757459 doi "https://doi.org/10.1049/pbed008e_ch6" @default.
- W2247757459 hasPublicationYear "2011" @default.
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