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- W2247892429 abstract "The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO 2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO 2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO 2 thickness)." @default.
- W2247892429 created "2016-06-24" @default.
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- W2247892429 date "2015-12-01" @default.
- W2247892429 modified "2023-10-04" @default.
- W2247892429 title "Effect of SiO<sub>2</sub> Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy" @default.
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- W2247892429 doi "https://doi.org/10.4028/www.scientific.net/amr.1131.16" @default.
- W2247892429 hasPublicationYear "2015" @default.
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