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- W2248394785 abstract "In this paper, we present a design and benchmarking methodology of Spin Wave Device (SWD) circuits based on micromagnetic modeling. SWD technology is compared against a 10nm FinFET CMOS technology, considering the key metrics of area, delay and power. We show that SWD circuits outperform the 10nm CMOS FinFET equivalents by a large margin. The area-delay-power product (ADPP) of SWD is smaller than CMOS for all benchmarks from 2.5× to 800×. On average, the area of SWD circuits is 3.5× smaller and the power consumption is two orders of magnitude lower compared to the 10nm CMOS reference circuits." @default.
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- W2248394785 date "2015-07-01" @default.
- W2248394785 modified "2023-10-18" @default.
- W2248394785 title "Design and benchmarking of hybrid CMOS-Spin Wave Device Circuits compared to 10nm CMOS" @default.
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- W2248394785 doi "https://doi.org/10.1109/nano.2015.7388699" @default.
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