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• W2248926863 abstract "We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/Al₂O₃/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of Al₂O₃ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and Al₂O₃ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of Al₂O₃ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about 45{mu}m at the Al₂O₃ layer thickness of 4 nm. The preferential crystal orientation was and more dominant with the thinner Al₂O₃ layer. In summary, we obtained a pc-Si film not only with {sim}45{mu}m grain size but also with the crystallinity of about 75% at 4 nm Al₂O₃ layer thickness by ALILE process with the structure of a glass/Al/Al₂O₃/a-Si." @default.
• W2248926863 created "2016-06-24" @default.
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• W2248926863 date "2010-06-01" @default.
• W2248926863 modified "2023-09-28" @default.
• W2248926863 title "Study on the fabrication of a polycrystalline silicon (pc-Si) seed layer for the pc-Si lamelliform solar cell" @default.
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