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• W2248947546 startingPage "685" @default.
• W2248947546 abstract "In this work, we investigated the methods that measure the threshold voltage ( V th ) instability without relaxation of the gate stress during the V th measurement. We propose a non-relaxation method that demonstrates exact V th shifts compared with conventional methods that are not as accurate. In the non-relaxation method, the constant gate-source voltage ( V gs ) is continuously applied as a gate stress while the drain voltage ( V d s ) shift required to maintain a constant drain current ( I d ) is measured. Then, the V d s shift is converted to a V th shift. The V th shift values measured by the non-relaxation method are larger than those measured by the other methods, which means that the non-relaxation method can very accurately measure the V th shift." @default.
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• W2248947546 date "2015-06-01" @default.
• W2248947546 modified "2023-09-24" @default.
• W2248947546 title "Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method" @default.
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• W2248947546 doi "https://doi.org/10.4028/www.scientific.net/msf.821-823.685" @default.
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