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• W2255440397 abstract "The growth rates RSi of Si layers deposited on Si(011)“16×2” by gas-source molecular beam epitaxy from Si2H6 were determined as a function of temperature Ts (400–975 °C) and Si2H6 flux JSi2H6(5.0×1015–9.0×1016 cm−2 s−1). RSi ranges from 0.0015 μm h−1 at Ts=400 °C to 0.415 μm  h−1 at Ts=975 °C with JSi2H6=2.2×1016 cm−2 s−1. In the surface-reaction-limited regime at Ts 900 °C, RSi(Ts) increases with Ts due to surface roughening. Overall, RSi(JSi2H6,Ts) is well described at Ts⩽900 °C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si2H6 onto dangling bonds followed by fast surface dissociation steps and second-order H2 desorption from the surface monohydride phase; and ..." @default.
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• W2255440397 date "2000-05-15" @default.
• W2255440397 modified "2023-09-26" @default.
• W2255440397 title "Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics" @default.
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• W2255440397 doi "https://doi.org/10.1063/1.126495" @default.
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