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• W2255958598 abstract "In this paper, we report a detailed study of the negative capacitance field effect transistor (NCFET). We present the condition for the stabilization of the negative capacitance to achieve the voltage amplification across the active layer. The theory is based on Landau's theory of ferroelectrics combined with the surface potential model in all regimes of operation. We demonstrate the validity of the presented theory on experimental NCFETs using a gate stack made of P(VDF-TrFE) and SiO2. The proposed analytical modeling shows good agreement with experimental data." @default.
• W2255958598 created "2016-06-24" @default.
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• W2255958598 date "2016-02-12" @default.
• W2255958598 modified "2023-10-16" @default.
• W2255958598 title "Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices" @default.
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• W2255958598 doi "https://doi.org/10.1088/0957-4484/27/11/115201" @default.
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