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- W2256866730 abstract "We have studied the electronic states of shallow P-doped n-type Si(100) with hydrofluoric acid (HF) treatment using high-resolution electron energy loss spectroscopy (HREELS). Upon HF treatment, HREELS measurements confirmed the formation of hydride on the Si surface. The surface plasmon energy was measured as an indicator of the change in carrier density near the surface region (12 nm). We observed a blueshift of the plasmon peak after annealing at 300 °C, indicating the reactivation of the P dopant atoms neutralized by hydrogen near the Si surface. Further annealing at 600 °C removed hydrogen from the Si surface, resulting in surface states due to dangling bonds. The electron transfer towards the surface states induces the reduction in electron density, forming a depletion layer, and band bending. The activation efficiency of the P dopant near the surface was estimated to be 55–59% on the basis of the relationship between surface plasmon energy and carrier density." @default.
- W2256866730 created "2016-06-24" @default.
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- W2256866730 date "2015-10-09" @default.
- W2256866730 modified "2023-09-27" @default.
- W2256866730 title "Effects of hydrogenation on electronic properties of P dopant near a Si surface" @default.
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- W2256866730 doi "https://doi.org/10.7567/jjap.54.111302" @default.
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