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- W2257750413 abstract "This chapter reviews the composition and structural and morphological properties of amorphous gallium arsenide, considering theoretical results and experimental aspects of the density of states. The chapter also discusses the optical results, phonon spectra, electrical transport properties, applications, and devices. The deposition conditions and the possible annealing processes influence physical properties of the material. The amorphous compounds contain defects, which alter the density of states. They can be dangling bonds or bonds among like atoms. When the atoms involved remain tetrahedral bonded, it is possible to consider two types of like bonds generated by an arsenic atom on a gallium site or vice versa. The arsenic-like bonds act as deep donors and gallium-like bonds act as deep acceptors. The bonding in III–V is largely ionic, and thus chemical disorder produces large changes through the Coulomb interaction. The degree of tolerable chemical disorder depends on the compound ionicity, which determines the energy cost of a wrong bond compared to the normal heteropolar bond. Both structural and chemical defects in amorphous III–V compounds introduce states in the mobility gap and/or at the band edges. Configurational disorder refers to variations in angle bond and bond lengths from values characteristic of the crystal." @default.
- W2257750413 created "2016-06-24" @default.
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- W2257750413 date "2002-01-01" @default.
- W2257750413 modified "2023-10-16" @default.
- W2257750413 title "Physical properties of amorphous gallium arsenide" @default.
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- W2257750413 doi "https://doi.org/10.1016/b978-012512908-4/50058-8" @default.
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