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• W2259091210 abstract "The study of processing by liquid-phase epitaxy (LPE) is promising because the LPE process can provide rapid and thick film formation of RBa2 Cu3 O7- (RBCO). The growth rate can reach 10 µm min-1and films of more than 5 µm in thickness formed by the LPE process show a high critical current density of about 1 MA cm-2 . To apply this process widely, a decrease of the processing temperature is required because it gives rise to a reaction between the solution and many of the substrate materials. Film formation on yttria-stabilized ZrO2and silver substrates, which are more reactive than other materials such as MgO or SrTiO3 , has been achieved by decreasing the temperature to below 920 °C, with the addition of BaF2in the solution. This paper describes processing by LPE for forming RBCO films and efforts for practical application towards coated conductors and RF electronic devices." @default.
• W2259091210 created "2016-06-24" @default.
• W2259091210 creator A5001637286 @default.
• W2259091210 date "2000-01-01" @default.
• W2259091210 modified "2023-10-14" @default.
• W2259091210 title "Liquid-phase epitaxy processing of RBa₂Cu₃O_7−δ" @default.
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• W2259091210 doi "https://doi.org/10.1088/0953-2048/13/1/311" @default.
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