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- W2259608859 abstract "Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion." @default.
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- W2259608859 date "2014-02-01" @default.
- W2259608859 modified "2023-09-25" @default.
- W2259608859 title "The total dose effects on the 1/fnoise of deep submicron CMOS transistors" @default.
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- W2259608859 doi "https://doi.org/10.1088/1674-4926/35/2/024006" @default.
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