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- W2259695369 abstract "We fabricated a metal/ferroelectric/insulator/semiconductor (MFIS) structure using SrBi 2 Ta 2 O 9 (SBT) as the ferroelectric material for the first time. The SBT thin film on CeO 2 /Si (100) had (105), (110) and (200) orientation. Threshold hysteresis (called “memory window”) was observed in the capacitance-voltage ( C–V ) characteristics of this sample. The memory window was about 0.5 V. From the calculation of the C–V characteristics, it is estimated that the density of surface states at the CeO 2 /Si interface increases upon deposition of SBT. By X-ray diffraction (XRD) analysis, diffusion of Si to the surface of SBT was detected. In order to prevent such diffusion it may be necessary to reduce the firing temperature." @default.
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- W2259695369 date "1996-12-01" @default.
- W2259695369 modified "2023-09-26" @default.
- W2259695369 title "Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi$_{bf 2}$Ta$_{bf 2}$O$_{bf 9}$ as the Ferroelectric Material" @default.
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- W2259695369 doi "https://doi.org/10.1143/jjap.35.l1680" @default.
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