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- W2261454014 abstract "Low-pressure MOCVD has been used to investigate the properties of low-temperature buffer layer deposition conditions and their influence on the properties of high-temperature GaN epilayers grown subsequently. It is found that the surface morphology of the as-grown buffer layer after thermal annealing at 1030℃ and 1050℃ depends strongly on the thickness of the buffer layer. In particular when a thick buffer layer is used, large trapezoidal nuclei are formed after annealing." @default.
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- W2261454014 date "2002-01-01" @default.
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- W2261454014 title "Characterization of GaN Buffer Layers and Its Epitaxial Layers Grown by MOCVD" @default.
- W2261454014 hasPublicationYear "2002" @default.
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