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• W2261965489 abstract "We report on improved electrical properties of Schottky contacts to InGaN alloys by introducing a photoelectrochemical treatment. The Schottky barrier height determined by a thermionic-field emission model, a dominating forward-current-transport mechanism, increased by 0.15 eV from 1.02 eV for conventional contacts to 1.17 eV for those with photoelectrochemical treatment at room temperature, while the ideality factors is closer to 1 after photoelectrochemical treatment. Furthermore, the reverse leakage mechanism varies from an ohmic transport mechanism at relatively low voltage and space charge-limited current mechanism at relatively high voltage for conventional contacts to Frenkel–Poole emission for improved Schottky contacts, which is attributed to partly removing surface states by the photoelectrochemical treatment." @default.
• W2261965489 created "2016-06-24" @default.
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• W2261965489 date "2015-12-03" @default.
• W2261965489 modified "2023-09-28" @default.
• W2261965489 title "Improved Schottky contacts to InGaN alloys by a photoelectrochemical treatment" @default.
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• W2261965489 doi "https://doi.org/10.1002/pssa.201532717" @default.
• W2261965489 hasPublicationYear "2015" @default.
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