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- W2262542354 abstract "The characterization and control of thin film growth processes requires improved methods of characterization and understanding of decomposition pathways and surface reaction kinetics under steady-state epitaxial growth involving organometallic precursors. In this contribution the authors present the application of p-polarized reflectance spectroscopy (PRS) for real-time monitoring and control of pulsed chemical beam epitaxy (PCBE) during low temperature growth of epitaxial Ga{sub 1{minus}x}In{sub x}P heterostructures on Si(001) substrates by PCBE, where the growth surface is sequentially exposed to organometallic precursors. During the pulsed precursor supply the surface reaction kinetics can be followed by analyzing a periodically in composition and thickness modulated surface reaction layer (SRL), which is captured in the PR-signals as a fine structure that is superimposed to the interference fringes caused due to the underlying growing film. The optical response is linked to the growth process via a reduced order surface kinetics (ROSK) model and integrated as a control signal in the implementation of filter and control algorithms for closed-loop controlled growth of epitaxial Ga{sub 1{minus}x}In{sub x}P heterostructures on Si(001) substrates. The control concept has been applied for thickness and compositional graded multi-heterostructure Ga{sub x}In{sub 1{minus}x}P epilayers and validated by ex-situ post-growth analysis, showing superior tracking of composition andmore » thickness targets under closed loop controlled conditions compared to films grown using pre-designed source injection profiles (open-loop conditions).« less" @default.
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- W2262542354 date "2000-07-01" @default.
- W2262542354 modified "2023-09-23" @default.
- W2262542354 title "Real-time optical characterization and control of heteroepitaxial Ga{sub x}In{sub 1{minus}x}P growth by P-polarized reflectance" @default.
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