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- W2262859610 endingPage "033301" @default.
- W2262859610 startingPage "033301" @default.
- W2262859610 abstract "The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon—plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×1018 cm−3 and 8×1018 cm−3 with a carrier mobility of 30–55 cm2/(V·s) for n-type 4H-SiC substrates and 1× 1016−3×1016 cm−3 with mobility of 290–490 cm2/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×1016 cm−3 with mobility of 380 cm2/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers." @default.
- W2262859610 created "2016-06-24" @default.
- W2262859610 creator A5000130762 @default.
- W2262859610 creator A5007755497 @default.
- W2262859610 creator A5033229646 @default.
- W2262859610 creator A5037808552 @default.
- W2262859610 creator A5041000097 @default.
- W2262859610 creator A5056681653 @default.
- W2262859610 creator A5056864229 @default.
- W2262859610 creator A5058429155 @default.
- W2262859610 creator A5058903146 @default.
- W2262859610 creator A5068791169 @default.
- W2262859610 creator A5071235043 @default.
- W2262859610 date "2011-03-01" @default.
- W2262859610 modified "2023-10-18" @default.
- W2262859610 title "Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement" @default.
- W2262859610 cites W1621249408 @default.
- W2262859610 cites W1982527799 @default.
- W2262859610 cites W1983977531 @default.
- W2262859610 cites W1991821464 @default.
- W2262859610 cites W1996128192 @default.
- W2262859610 cites W1999121540 @default.
- W2262859610 cites W2000725551 @default.
- W2262859610 cites W2016381570 @default.
- W2262859610 cites W2027474129 @default.
- W2262859610 cites W2027515313 @default.
- W2262859610 cites W2029284303 @default.
- W2262859610 cites W2058818432 @default.
- W2262859610 cites W2061696737 @default.
- W2262859610 cites W2089336848 @default.
- W2262859610 cites W2093686522 @default.
- W2262859610 cites W2094956071 @default.
- W2262859610 cites W2108504149 @default.
- W2262859610 cites W2324960773 @default.
- W2262859610 cites W4241373489 @default.
- W2262859610 doi "https://doi.org/10.1088/1674-1056/20/3/033301" @default.
- W2262859610 hasPublicationYear "2011" @default.
- W2262859610 type Work @default.
- W2262859610 sameAs 2262859610 @default.
- W2262859610 citedByCount "11" @default.
- W2262859610 countsByYear W22628596102012 @default.
- W2262859610 countsByYear W22628596102013 @default.
- W2262859610 countsByYear W22628596102016 @default.
- W2262859610 countsByYear W22628596102017 @default.
- W2262859610 countsByYear W22628596102018 @default.
- W2262859610 countsByYear W22628596102019 @default.
- W2262859610 countsByYear W22628596102022 @default.
- W2262859610 crossrefType "journal-article" @default.
- W2262859610 hasAuthorship W2262859610A5000130762 @default.
- W2262859610 hasAuthorship W2262859610A5007755497 @default.
- W2262859610 hasAuthorship W2262859610A5033229646 @default.
- W2262859610 hasAuthorship W2262859610A5037808552 @default.
- W2262859610 hasAuthorship W2262859610A5041000097 @default.
- W2262859610 hasAuthorship W2262859610A5056681653 @default.
- W2262859610 hasAuthorship W2262859610A5056864229 @default.
- W2262859610 hasAuthorship W2262859610A5058429155 @default.
- W2262859610 hasAuthorship W2262859610A5058903146 @default.
- W2262859610 hasAuthorship W2262859610A5068791169 @default.
- W2262859610 hasAuthorship W2262859610A5071235043 @default.
- W2262859610 hasConcept C120665830 @default.
- W2262859610 hasConcept C121332964 @default.
- W2262859610 hasConcept C160671074 @default.
- W2262859610 hasConcept C169573571 @default.
- W2262859610 hasConcept C192562407 @default.
- W2262859610 hasConcept C40003534 @default.
- W2262859610 hasConcept C49040817 @default.
- W2262859610 hasConceptScore W2262859610C120665830 @default.
- W2262859610 hasConceptScore W2262859610C121332964 @default.
- W2262859610 hasConceptScore W2262859610C160671074 @default.
- W2262859610 hasConceptScore W2262859610C169573571 @default.
- W2262859610 hasConceptScore W2262859610C192562407 @default.
- W2262859610 hasConceptScore W2262859610C40003534 @default.
- W2262859610 hasConceptScore W2262859610C49040817 @default.
- W2262859610 hasIssue "3" @default.
- W2262859610 hasLocation W22628596101 @default.
- W2262859610 hasOpenAccess W2262859610 @default.
- W2262859610 hasPrimaryLocation W22628596101 @default.
- W2262859610 hasRelatedWork W1833801860 @default.
- W2262859610 hasRelatedWork W1976802243 @default.
- W2262859610 hasRelatedWork W1995468983 @default.
- W2262859610 hasRelatedWork W2030453559 @default.
- W2262859610 hasRelatedWork W2102058266 @default.
- W2262859610 hasRelatedWork W2360185532 @default.
- W2262859610 hasRelatedWork W2981306144 @default.
- W2262859610 hasRelatedWork W35854069 @default.
- W2262859610 hasRelatedWork W4282827366 @default.
- W2262859610 hasRelatedWork W4289655564 @default.
- W2262859610 hasVolume "20" @default.
- W2262859610 isParatext "false" @default.
- W2262859610 isRetracted "false" @default.
- W2262859610 magId "2262859610" @default.
- W2262859610 workType "article" @default.