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- W2264766576 abstract "Defect centers generated in vacuum-ultraviolet irradiated chemical-mechanical polished oxides have been characterized using electron paramagnetic resonance and C-V analysis. Both oxide trap E{sub {gamma}} and interface trap P{sub b0} centers were detected in unpolished and polished oxides. In addition, another interface defect center known as the P{sub b1} center was only identified in the polished oxides, suggesting that the polishing process altered the SiO{sub 2}/Si interface." @default.
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- W2264766576 date "1994-12-31" @default.
- W2264766576 modified "2023-10-16" @default.
- W2264766576 title "Defect centers in chemical-mechanical polished MOS oxides" @default.
- W2264766576 hasPublicationYear "1994" @default.
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