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- W2264767592 abstract "iv Lista de Publicacoes v 1 Introducao 1 1.1 Estagio atual da tecnologia MOSFET . . . . . . . . . . . . . . . . . . . . . 4 2 Analise de materiais utilizando feixes de ions 7 2.1 Per lometria utilizando reacoes nucleares . . . . . . . . . . . . . . . . . . . 8 2.2 Espalhamento de ions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.3 Perda de energia de ions na materia . . . . . . . . . . . . . . . . . . . . . . 15 2.3.1 Modelo convencional . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.3.2 Efeito do centro espalhador . . . . . . . . . . . . . . . . . . . . . . 19 2.3.3 Estatistica de colisoes . . . . . . . . . . . . . . . . . . . . . . . . . 23 2.3.4 Aproximacao analitica . . . . . . . . . . . . . . . . . . . . . . . . . 27 3 Materiais avancados para a microeletronica 29 3.1 Eletrodos de porta metalicos . . . . . . . . . . . . . . . . . . . . . . . . . . 29 3.1.1 Transporte de oxigenio em eletrodos de Renio . . . . . . . . . . . . 30 3.1.2 Mobilidade de Al e Sb durante a formacao de eletrodos totalmente silicidados . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 3.2 Dieletricos high-κ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 3.2.1 Difusao de oxigenio em lmes de HfO2 . . . . . . . . . . . . . . . . 32 3.2.2 Transporte atomico em camadas de Al2O3 sobre HfO2 . . . . . . . . 32 3.2.3 Transporte e incoporacao de hidrogenio e deuterio em diletricos baseados em Hf . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 4 Consideracoes nais 34 A Quanti cacao do dano causado pela radiacao, uma proposta 37" @default.
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- W2264767592 date "2009-01-01" @default.
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- W2264767592 title "Análise de materiais nanoestruturados utilizando feixes de íons" @default.
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