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- W2264936788 abstract "Can a silicon-based technology like Si/SiGe HBT exhibit performance compatible with the demands of the low-power wireless communications marketplace, and does it retain the low cost and manufacturability of its silicon pedigree? This chapter will attempt to answer that question by summarizing the progress and prospects for this technology in the area of low-power mobile communications systems, with particular emphasis on circuit and device performance. It is organized in the following manner. Section 4.2 outlines the advantages and disadvantages of silicon technology for applications to high-frequency low-power communications circuits. Section 4.3 summarizes the key device design aspects of SiGe devices, particularly with respect to high-frequency applications. Section 4.4 provides an assessment of passive component technology in Si/SiGe technology. Section 4.5 provides a direct comparison of the performance of silicon-based HBTs to those based on III-V technologies. Finally, Section 4.6 provides an overview of reported circuit performance in Si/SiGe HBT technology, with emphasis on low-power communications applications." @default.
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- W2264936788 date "2001-09-01" @default.
- W2264936788 modified "2023-10-16" @default.
- W2264936788 title "Si/SiGe HBT Technology for Low‐Power Mobile Communications System Applications" @default.
- W2264936788 doi "https://doi.org/10.1002/0471221643.ch4" @default.
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