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• W2266076067 abstract "A new analytical model for the surface electric field distribution and breakdown voltage of the silicon on insulator (SOI) trench lateral double-diffused metal-oxide-semiconductor (LDMOS) is presented. Based on the two-dimensional Laplace solution and Poisson solution, the model considers the influence of structure parameters such as the doping concentration of the drift region, and the depth and width of the trench on the surface electric field. Further, a simple analytical expression of the breakdown voltage is obtained, which offers an effective way to gain an optimal high voltage. All the analytical results are in good agreement with the simulation results." @default.
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• W2266076067 date "2012-07-01" @default.
• W2266076067 modified "2023-09-25" @default.
• W2266076067 title "A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS" @default.
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• W2266076067 doi "https://doi.org/10.1088/1674-1056/21/7/078502" @default.
• W2266076067 hasPublicationYear "2012" @default.
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