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- W2266703722 abstract "This paper reports the quality of InxGa1-xAs (0＜x＜0.2) layers grown on misoriented GaAs substrate (2°-and 15°-off) by metalorganic chemical vapor deposition. The crystalline quality of the InxGa1-xAs epilayers is determined by x-ray reciprocal space mapping (RSM). RSM results show that the crystalline quality of InxGa1-xAs epilayers grown on 2°-off GaAs substrate is better than that of 15°-off GaAs substrate. It could be due to small strain relaxation in the epilayer grown on 2°-off GaAs substrate. The photovoltaic performance of In0.16Ga0.84As solar cell grown on 2°-off GaAs substrate is better than that of In0.16Ga0.84As grown on a 15°-off GaAs substrate, because the InxGa1-xAs films grown on 15°-off GaAs substrate show a large strain relaxation in the active layer of the solar cell. A large strain relaxation causes the high dislocation density at the initial active layer/InxGa1-xAs graded layer interface for the solar cell grown on 15°-off GaAs substrate." @default.
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- W2266703722 date "2011-09-01" @default.
- W2266703722 modified "2023-10-18" @default.
- W2266703722 title "Investigation of InGaAs Epilayer Crystalline Quality and Photovoltaic Device Application" @default.
- W2266703722 doi "https://doi.org/10.29808/jvsroc.201109.0006" @default.
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