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- W2266896085 abstract "Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO₂/TiO₂/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO₂/TiO₂/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO₂/TiO₂/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors." @default.
- W2266896085 created "2016-06-24" @default.
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- W2266896085 date "2015-09-11" @default.
- W2266896085 modified "2023-10-07" @default.
- W2266896085 title "Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO<sub>2</sub>/TiO<sub>2</sub> stack structure" @default.
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- W2266896085 doi "https://doi.org/10.1088/0957-4484/26/39/391001" @default.
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