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- W226735388 abstract "Abstract Both In2O3 and ZnO are potential oxide semiconductor materials for optoelectronics devices. Semi-polar (101) plane wurtzite ( w -)ZnO films were grown on bcc-In2O3(111) by metal organic chemical vapor deposition and the epitaxial relation is w -ZnO(101) ∥ b c c - In 2 O 3 ( 111 ) . We have measured the valence band offset (VBO) of w -ZnO(101)/bcc-In2O3(111) heterojunction to settle the question of the band line-up of the ZnO/ In2O3 heterojunction. Our result shows that the valence band maximum (VBM) of ZnO (101) lies ∼ 0.49 eV below the VBM of bcc- In2O3(111), and the conduction band maximum (CBM) of w -ZnO(101) is about 0.05 eV lower than the CBM of bcc-In2O3(111), which shows that their CBMs are nearly at the same level." @default.
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- W226735388 date "2010-11-01" @default.
- W226735388 modified "2023-09-26" @default.
- W226735388 title "The growth of ZnO on buffer layers and the valence band offset determined by X-ray photoemission spectroscopy" @default.
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- W226735388 doi "https://doi.org/10.1016/j.ssc.2010.08.022" @default.
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