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- W2267358445 abstract "Aggressive voltage scaling into the subthreshold operating region holds great promise for applications with strict energy budget. However, it has been established that higher speed superthreshold device is not suitable for moderate performance subthreshold circuits. The design constraint for selecting<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M1><mml:mrow><mml:msub><mml:mrow><mml:mi>V</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant=normal>t</mml:mi><mml:mi mathvariant=normal>h</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M2><mml:mrow><mml:msub><mml:mrow><mml:mi>T</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant=normal>O</mml:mi><mml:mi mathvariant=normal>X</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>is much more flexible for subthreshold circuits at low voltage level than superthreshold circuits. In order to obtain better performance from a device under subthreshold conditions, it is necessary to investigate and optimize the process and geometry parameters of a Si MOSFET at nanometer technology node. This paper calibrates the fabrication process parameters and electrical characteristics for n- and p-MOSFETs with 35 nm physical gate length. Thereafter, the calibrated device for superthreshold application is optimized for better performance under subthreshold conditions using TCAD simulation. The device simulated in this work shows 9.89% improvement in subthreshold slope and 34% advantage in<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M3><mml:msub><mml:mrow><mml:mi>I</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant=normal>O</mml:mi><mml:mi mathvariant=normal>N</mml:mi></mml:mrow></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>I</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant=normal>O</mml:mi><mml:mi mathvariant=normal>F</mml:mi><mml:mi mathvariant=normal>F</mml:mi></mml:mrow></mml:msub></mml:math>ratio for the same drive current." @default.
- W2267358445 created "2016-06-24" @default.
- W2267358445 creator A5001597535 @default.
- W2267358445 creator A5046540245 @default.
- W2267358445 creator A5068036540 @default.
- W2267358445 creator A5078191582 @default.
- W2267358445 date "2015-01-01" @default.
- W2267358445 modified "2023-09-25" @default.
- W2267358445 title "Optimization and Characterization of CMOS for Ultra Low Power Applications" @default.
- W2267358445 cites W1539883310 @default.
- W2267358445 cites W1966879182 @default.
- W2267358445 cites W1968721941 @default.
- W2267358445 cites W2025516544 @default.
- W2267358445 cites W2081493756 @default.
- W2267358445 cites W2095816496 @default.
- W2267358445 cites W2103238112 @default.
- W2267358445 cites W2116469166 @default.
- W2267358445 cites W2122846829 @default.
- W2267358445 cites W2142531470 @default.
- W2267358445 cites W2148622385 @default.
- W2267358445 cites W2152293406 @default.
- W2267358445 doi "https://doi.org/10.1155/2015/395090" @default.
- W2267358445 hasPublicationYear "2015" @default.
- W2267358445 type Work @default.
- W2267358445 sameAs 2267358445 @default.
- W2267358445 citedByCount "0" @default.
- W2267358445 crossrefType "journal-article" @default.
- W2267358445 hasAuthorship W2267358445A5001597535 @default.
- W2267358445 hasAuthorship W2267358445A5046540245 @default.
- W2267358445 hasAuthorship W2267358445A5068036540 @default.
- W2267358445 hasAuthorship W2267358445A5078191582 @default.
- W2267358445 hasBestOaLocation W22673584451 @default.
- W2267358445 hasConcept C11413529 @default.
- W2267358445 hasConcept C119599485 @default.
- W2267358445 hasConcept C127413603 @default.
- W2267358445 hasConcept C156465305 @default.
- W2267358445 hasConcept C165801399 @default.
- W2267358445 hasConcept C172385210 @default.
- W2267358445 hasConcept C192562407 @default.
- W2267358445 hasConcept C41008148 @default.
- W2267358445 hasConceptScore W2267358445C11413529 @default.
- W2267358445 hasConceptScore W2267358445C119599485 @default.
- W2267358445 hasConceptScore W2267358445C127413603 @default.
- W2267358445 hasConceptScore W2267358445C156465305 @default.
- W2267358445 hasConceptScore W2267358445C165801399 @default.
- W2267358445 hasConceptScore W2267358445C172385210 @default.
- W2267358445 hasConceptScore W2267358445C192562407 @default.
- W2267358445 hasConceptScore W2267358445C41008148 @default.
- W2267358445 hasLocation W22673584451 @default.
- W2267358445 hasLocation W22673584452 @default.
- W2267358445 hasOpenAccess W2267358445 @default.
- W2267358445 hasPrimaryLocation W22673584451 @default.
- W2267358445 hasRelatedWork W1593424929 @default.
- W2267358445 hasRelatedWork W2018127069 @default.
- W2267358445 hasRelatedWork W2131019417 @default.
- W2267358445 hasRelatedWork W2132385758 @default.
- W2267358445 hasRelatedWork W2155827627 @default.
- W2267358445 hasRelatedWork W2386767533 @default.
- W2267358445 hasRelatedWork W2748952813 @default.
- W2267358445 hasRelatedWork W2766813066 @default.
- W2267358445 hasRelatedWork W2899084033 @default.
- W2267358445 hasRelatedWork W4242937255 @default.
- W2267358445 isParatext "false" @default.
- W2267358445 isRetracted "false" @default.
- W2267358445 magId "2267358445" @default.
- W2267358445 workType "article" @default.