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• W2269747136 startingPage "1602" @default.
• W2269747136 abstract "Memristive devices, whose conductance depends on previous programming history, are of significant interest for building nonvolatile memory and brain-inspired computing systems. Here, we report half-integer quantized conductance transitions G = (n/2) (2e2/h) for n = 1, 2, 3, etc., in Cu/SiO2/W memristive devices observed below 300 mV at room temperature. This is attributed to the nanoscale filamentary nature of Cu conductance pathways formed inside SiO2. Retention measurements also show spontaneous filament decay with quantized conductance levels. Numerical simulations shed light into the dynamics underlying the data retention loss mechanisms and provide new insights into the nanoscale physics of memristive devices and trade-offs involved in engineering them for computational applications." @default.
• W2269747136 created "2016-06-24" @default.
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• W2269747136 creator A5061080590 @default.
• W2269747136 date "2016-02-15" @default.
• W2269747136 modified "2023-10-16" @default.
• W2269747136 title "A 250 mV Cu/SiO₂/W Memristor with Half-Integer Quantum Conductance States" @default.
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• W2269747136 doi "https://doi.org/10.1021/acs.nanolett.5b04296" @default.
• W2269747136 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/26849776" @default.
• W2269747136 hasPublicationYear "2016" @default.
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