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• W2271591567 abstract "Abstract We report on a study of AlGaN/GaN heterostructure lateral Schottky barrier diodes (L-SBDs) grown on a bulk GaN substrate. The L-SBDs exhibited an ultralow reverse leakage current below 10 −6 A/cm 2 without employing any extra treatments, which was over 4 orders of magnitude lower than that of a reference device on a sapphire substrate. The superior performance was attributed to the high crystalline quality of the heterostructure achieved by homoepitaxy. The comparison also revealed that the absence of high-density trap states in the homoepitaxial L-SBD grown on the bulk GaN substrate played a key role in achieving a low reverse leakage current." @default.
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• W2271591567 date "2016-01-28" @default.
• W2271591567 modified "2023-10-14" @default.
• W2271591567 title "Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate" @default.
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• W2271591567 doi "https://doi.org/10.7567/apex.9.031001" @default.
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