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- W2271696368 abstract "In this paper we report on the effect of an In x Ga1-x N continuously graded buffer layer on an InGaN epilayer grown on a GaN template.In our experiment,three types of buffer layers including constant composition,continuously graded composition,and the combination of constant and continuously graded composition are used.Surface morphologies,crystalline quality,indium incorporations,and relaxation degrees of InGaN epilayers with different buffer layers are investigated.It is found that the In x Ga1-x N continuously graded buffer layer is effective to improve the surface morphology,crystalline quality,and the indium incorporation of the InGaN epilayer.These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations." @default.
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- W2271696368 date "2013-01-01" @default.
- W2271696368 modified "2023-09-23" @default.
- W2271696368 title "Effect of InxGal-xN ＂continuously graded＂ buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition" @default.
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