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- W2272135098 abstract "The paper presents results of the development of ultraviolet light−emitting diodes based on GaN/AlGaN heterostructures grown on AlN substrates by chloride−hydride vapor phase epitaxy. The peak wavelengths are in the range of 360—365 nm with a spectral width of 10—13 nm; the output optical power of LED dies is 50 mW at 350 mA." @default.
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- W2272135098 date "2015-03-16" @default.
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- W2272135098 title "NEW DIRECTIONS IN THE DEVELOPMENT OF ULTRAVIOLET LIGHT–EMITTING DIODE TECHNOLOGY" @default.
- W2272135098 doi "https://doi.org/10.17073/1609-3577-2012-1-52-56" @default.
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