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- W2275239240 abstract "A photoanode with Ga-doped ZnO nanorods has been prepared on F-doped SnO2 (FTO) coated glass substrate and its application in dye-sensitized solar cells (DSSCs) has been investigated. Ga-doped ZnO nanorods have been synthesized by an electric-field-assisted wet chemical approach at 80?C. Under a direct current electric field, the nanorods predominantly grow on cathodes. The results of the X-ray photoelectron spectroscopy and photoluminescence verify that Ga dopant is successfully incorporated into the ZnO wurtzite lattice structure. Finally, employing Ga-doped ZnO nanorods with the length of ~5 μm as the photoanode of DSSCs, an overall energy conversion efficiency of 2.56% is achieved. The dramatically improved performance of Ga-doped ZnO based DSSCs compared with that of pure ZnO is due to the higher electron conductivity." @default.
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- W2275239240 date "2015-01-01" @default.
- W2275239240 modified "2023-09-30" @default.
- W2275239240 title "Electric-Field-Assisted Growth of Ga-Doped ZnO Nanorods Arrays for Dye-Sensitized Solar Cells" @default.
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- W2275239240 doi "https://doi.org/10.4236/jpee.2015.312002" @default.
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