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- W2275886772 abstract "A new device model that takes into account of a surface adsorbate layer (ADL) is generated to study the C-V characteristics of the hydrogen-terminated diamond (HTD) MOSFET. In this model, the ADL acts like a reservoir of hole carriers and forms a hetero-structure with the hydrogen-terminated diamond surface. Our device model is applied to the C-V characteristics of a practical device and the results match well. This work is helpful in computer-aided design and optimization of future HDT devices." @default.
- W2275886772 created "2016-06-24" @default.
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- W2275886772 date "2015-05-15" @default.
- W2275886772 modified "2023-09-27" @default.
- W2275886772 title "A New Capacitance-Voltage Model for Hydrogen-Terminated Diamond Mosfet" @default.
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- W2275886772 doi "https://doi.org/10.1149/06601.0287ecst" @default.
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