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- W2276035326 abstract "In this reported work, amorphous InGaZnO thin film transistors (TFTs) with symmetric and asymmetric structures are fabricated. A constant positive gate bias for a time of 1–5 × 104 s was then applied to the TFTs to investigate their performance variation. The mobilities of the TFTs were not significantly degraded by a long stress time of 5 × 104 s. Also, decreases of sub-threshold swing and off-state current were observed for a stress time of 104 s. Although significant threshold voltage variation was found for the a-IGZO TFT with a symmetric design during the stress test, it could be reduced by 56% for the TFT fabricated by the proposed asymmetric design." @default.
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- W2276035326 date "2015-09-01" @default.
- W2276035326 modified "2023-10-16" @default.
- W2276035326 title "Stability improvement of amorphous InGaZnO TFTs by an asymmetric design" @default.
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- W2276035326 doi "https://doi.org/10.1049/el.2015.2036" @default.
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