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• W2277751102 endingPage "73" @default.
• W2277751102 startingPage "67" @default.
• W2277751102 abstract "Herein, we present the results of a systematic material development study we carried out in order to obtain a new positive tone resist for high resolution electron-beam lithography. Several acrylic copolymer materials with different mass fractions of the comonomers, different molecular weights and similar molecular weight distributions were synthesized and – as resist solutions – evaluated in terms of electron-beam lithography performance. On the one hand, within the ranges investigated, it was shown that the lithographic sensitivity is significantly influenced by the composition rather than by the molecular weight or molecular weight distribution. On the other hand, the etch resistance of the materials remains unaffected by changes of these parameters. The resist material exhibiting the best combination of the desired properties, mr-PosEBR, is 2 times more sensitive than PMMA (495 kDa) and performs comparably to the known high resolution resist ZEP520A. For example, a grating pattern with 29 nm wide lines with a period of 100 nm could be generated in films of mr-PosEBR with an area dose of 100 μC/cm2. In terms of resolution, single lines of only 35 nm width could be fabricated via metal lift-off using 100 kV EBL. Furthermore, the dry etch stability of mr-PosEBR in a reactive-ion etching (RIE) process (etch gases: CF4/SF6) is similar to the one of ZEP520A (etch rates, mr-PosEBR: 190 nm/min, ZEP520A: 150 nm/min, silicon: 440 nm/min). Moreover, high resolution nanopatterns in mr-PosEBR could be smoothly transferred into the underlying Si substrate by a RIE process." @default.
• W2277751102 created "2016-06-24" @default.
• W2277751102 creator A5009297260 @default.
• W2277751102 creator A5030249242 @default.
• W2277751102 creator A5045550925 @default.
• W2277751102 creator A5060032423 @default.
• W2277751102 creator A5074923981 @default.
• W2277751102 creator A5077759153 @default.
• W2277751102 creator A5080333127 @default.
• W2277751102 date "2016-04-01" @default.
• W2277751102 modified "2023-09-23" @default.
• W2277751102 title "Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography" @default.
• W2277751102 cites W1973159124 @default.
• W2277751102 cites W1975772894 @default.
• W2277751102 cites W1989220190 @default.
• W2277751102 cites W1995199651 @default.
• W2277751102 cites W1998363590 @default.
• W2277751102 cites W2011876451 @default.
• W2277751102 cites W2012451070 @default.
• W2277751102 cites W2014261386 @default.
• W2277751102 cites W2032930384 @default.
• W2277751102 cites W2033810970 @default.
• W2277751102 cites W2035315668 @default.
• W2277751102 cites W2035531612 @default.
• W2277751102 cites W2038276142 @default.
• W2277751102 cites W2056009271 @default.
• W2277751102 cites W2062778626 @default.
• W2277751102 cites W2071914429 @default.
• W2277751102 cites W2077742126 @default.
• W2277751102 cites W2079324247 @default.
• W2277751102 cites W2086465878 @default.
• W2277751102 cites W2096758852 @default.
• W2277751102 cites W2162093634 @default.
• W2277751102 cites W2989431795 @default.
• W2277751102 cites W4238454153 @default.
• W2277751102 doi "https://doi.org/10.1016/j.mee.2016.02.028" @default.
• W2277751102 hasPublicationYear "2016" @default.
• W2277751102 type Work @default.
• W2277751102 sameAs 2277751102 @default.
• W2277751102 citedByCount "8" @default.
• W2277751102 countsByYear W22777511022017 @default.
• W2277751102 countsByYear W22777511022019 @default.
• W2277751102 countsByYear W22777511022020 @default.
• W2277751102 countsByYear W22777511022021 @default.
• W2277751102 countsByYear W22777511022022 @default.
• W2277751102 crossrefType "journal-article" @default.
• W2277751102 hasAuthorship W2277751102A5009297260 @default.
• W2277751102 hasAuthorship W2277751102A5030249242 @default.
• W2277751102 hasAuthorship W2277751102A5045550925 @default.
• W2277751102 hasAuthorship W2277751102A5060032423 @default.
• W2277751102 hasAuthorship W2277751102A5074923981 @default.
• W2277751102 hasAuthorship W2277751102A5077759153 @default.
• W2277751102 hasAuthorship W2277751102A5080333127 @default.
• W2277751102 hasConcept C100460472 @default.
• W2277751102 hasConcept C111368507 @default.
• W2277751102 hasConcept C113196181 @default.
• W2277751102 hasConcept C127313418 @default.
• W2277751102 hasConcept C1291036 @default.
• W2277751102 hasConcept C130472188 @default.
• W2277751102 hasConcept C138268822 @default.
• W2277751102 hasConcept C154945302 @default.
• W2277751102 hasConcept C171250308 @default.
• W2277751102 hasConcept C185592680 @default.
• W2277751102 hasConcept C192562407 @default.
• W2277751102 hasConcept C200274948 @default.
• W2277751102 hasConcept C204223013 @default.
• W2277751102 hasConcept C2777289219 @default.
• W2277751102 hasConcept C2779227376 @default.
• W2277751102 hasConcept C41008148 @default.
• W2277751102 hasConcept C43617362 @default.
• W2277751102 hasConcept C49040817 @default.
• W2277751102 hasConcept C53524968 @default.
• W2277751102 hasConceptScore W2277751102C100460472 @default.
• W2277751102 hasConceptScore W2277751102C111368507 @default.
• W2277751102 hasConceptScore W2277751102C113196181 @default.
• W2277751102 hasConceptScore W2277751102C127313418 @default.
• W2277751102 hasConceptScore W2277751102C1291036 @default.
• W2277751102 hasConceptScore W2277751102C130472188 @default.
• W2277751102 hasConceptScore W2277751102C138268822 @default.
• W2277751102 hasConceptScore W2277751102C154945302 @default.
• W2277751102 hasConceptScore W2277751102C171250308 @default.
• W2277751102 hasConceptScore W2277751102C185592680 @default.
• W2277751102 hasConceptScore W2277751102C192562407 @default.
• W2277751102 hasConceptScore W2277751102C200274948 @default.
• W2277751102 hasConceptScore W2277751102C204223013 @default.
• W2277751102 hasConceptScore W2277751102C2777289219 @default.
• W2277751102 hasConceptScore W2277751102C2779227376 @default.
• W2277751102 hasConceptScore W2277751102C41008148 @default.
• W2277751102 hasConceptScore W2277751102C43617362 @default.
• W2277751102 hasConceptScore W2277751102C49040817 @default.
• W2277751102 hasConceptScore W2277751102C53524968 @default.
• W2277751102 hasLocation W22777511021 @default.
• W2277751102 hasOpenAccess W2277751102 @default.
• W2277751102 hasPrimaryLocation W22777511021 @default.
• W2277751102 hasRelatedWork W1538884143 @default.
• W2277751102 hasRelatedWork W1971928352 @default.
• W2277751102 hasRelatedWork W1991864070 @default.
• W2277751102 hasRelatedWork W2007118787 @default.

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