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• W2278069149 abstract "Integration of a photon source into the AlGaN/GaN high election mobility transistor (HEMT) platform will realize the functionality of on‐chip optical pumping of deep electron traps which suppress the dynamic performances of power HEMTs. Here, we report a Schottky‐on‐heterojunction light‐emitting diode (SoH‐LED) realized on the p‐doping‐free lateral AlGaN/GaN heterostructure. A physical mode based on hot electron induced surface states impact ionization was proposed to explain the hole generation and injection processes in this p‐doping‐free SoH‐LED. Since the SoH‐LED shares identical epitaxial structures with HEMT, integration of SoH‐LED and HEMT requires no additional epi‐layers during the wafer growth and minimum process modification during device fabrication. The SoH‐LED structure was seamlessly integrated into the HEMT platform as an on‐chip photon source. Experiment results showed that the SoH‐LED photons can effectively assist the electron de‐trapping processes from both of the surface and bulk deep traps, demonstrating the feasibility of using on‐chip generated photons to improve the dynamic performances of AlGaN/GaN power HEMTs." @default.
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• W2278069149 date "2016-02-24" @default.
• W2278069149 modified "2023-10-16" @default.
• W2278069149 title "Optoelectronic devices on AlGaN/GaN HEMT platform" @default.
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• W2278069149 doi "https://doi.org/10.1002/pssa.201532782" @default.
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