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• W2278201212 abstract "The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for and crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p + nn + diodes in the temperature range between -30 � C and 50 � C and electric fields of 2×10 3 V/cm to 2×10 4 V/cm." @default.
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• W2278201212 creator A5044753878 @default.
• W2278201212 date "2010-07-26" @default.
• W2278201212 modified "2023-09-25" @default.
• W2278201212 title "Anisotropic charge carrier mobilities in bulk silicon at high electric fields" @default.
• W2278201212 cites W2002640333 @default.
• W2278201212 hasPublicationYear "2010" @default.
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