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• W2279064228 abstract "Defence radar and wireless communication systems have a drastic need for increased rf performance for high power, high efficiency, high linearity and low-cost monolithic amplifiers operating in the 1-40 GHz frequency range. Semiconductor devices based on Silicon (Si) or Gallium Arsenide (GaAs) are currently used for the fabrication of communication systems but they are not able to deal with the continuous increase in demand for microwave power performances: those devices are very close to their limit, working with a poor efficiency and requiring large cooling systems. Therefore Gallium nitride-based devices are becoming extremely attractive for a wide range of applications, from optoelectronics to power electronics. In particular, High Electron Mobility Transistors (HEMT) are emerging as a key technology for rf and microwave amplifiers, but their stability and reliability is still one of the main issue that has to be solved in order to achieve production level quality devices." @default.
• W2279064228 created "2016-06-24" @default.
• W2279064228 creator A5057705073 @default.
• W2279064228 date "2008-01-01" @default.
• W2279064228 modified "2023-09-27" @default.
• W2279064228 title "Stress, Overstress and Strain on AlGaN/GaN HEMT Devices" @default.
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• W2279064228 hasPublicationYear "2008" @default.
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